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STMicroelectronics STGD6NC60HDT4
Collected dataigbt

STMicroelectronics

STGD6NC60HDT4

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
13.6nC
Gate Emitter Threshold Voltage Vge Th Ic
3.75V@250uA
Igbt Type
-
Input Capacitance Cies
205pF
Operating Temperature
-55℃~+150℃@(Tj)
Output Capacitance Coes
32pF
package
DPAK
Pd Power Dissipation
56W
Reverse Recovery Time Trr
21ns
Reverse Transfer Capacitance Cres
5.5pF
Switching Energy Eoff
68uJ
Td Off
76ns
Td On
12ns
Turn On Energy Eon
20uJ