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STMicroelectronics STGF10H60DF
Collected dataigbt

STMicroelectronics

STGF10H60DF

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
57nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@250uA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
1.3nF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
60pF
package
TO-220FP
Pd Power Dissipation
30W
Reverse Recovery Time Trr
107ns
Reverse Transfer Capacitance Cres
30pF
Switching Energy Eoff
140uJ
Td Off
103ns
Td On
19.5ns
Turn On Energy Eon
83uJ

Pages by item in this datasheet

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Features
1 page
Absolute maximum ratings
1 page
Electrical characteristics
3 pages
Thermal information
1 page
Timing
1 page
Package drawing
7 pages
Land pattern
1 page
Ordering information
1 page
STMicroelectronics datasheet · 25 pages · 44 sections, 14 tables, 44 figuresAll items and pages through the MCP →