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Key Specs Summary(11)
- Collector Emitter Breakdown Voltage Vces
- 390V
- Gate Charge Qg
- 24nC
- Gate Emitter Threshold Voltage Vge Th Ic
- 1.6V@4V,6A
- Igbt Type
- -
- Input Capacitance Cies
- -
- Operating Temperature
- -55℃~+175℃@(Tj)
- package
- DPAK
- Pd Power Dissipation
- 125W
- Td Off
- 4.3us
- Td On
- -
- Turn On Energy Eon
- -
Pages by item in this datasheet
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- Features
- 1 page
- Absolute maximum ratings
- 1 page
- Electrical characteristics
- 1 page
- Thermal information
- 1 page
- Package drawing
- 7 pages
STMicroelectronics datasheet · 20 pages · 32 sections, 11 tables, 26 figuresAll items and pages through the MCP →