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STMicroelectronics STGD8NC60KDT4
Collected dataigbt

STMicroelectronics

STGD8NC60KDT4

igbt

Ask your AI about STGD8NC60KDT4 — and the rest of your design

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Key Specs Summary(13)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
19nC
Gate Emitter Threshold Voltage Vge Th Ic
-
Igbt Type
-
Input Capacitance Cies
-
Operating Temperature
-55℃~+150℃@(Tj)
package
TO-252-2(DPAK)
Pd Power Dissipation
62W
Reverse Recovery Time Trr
23.5ns
Switching Energy Eoff
-
Td Off
72ns
Td On
17ns
Turn On Energy Eon
-