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STMicroelectronics STGD4M65DF2
Collected dataigbt

STMicroelectronics

STGD4M65DF2

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
650V
Gate Charge Qg
15.2nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@250uA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
369pF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
24.8pF
package
DPAK
Pd Power Dissipation
68W
Reverse Recovery Time Trr
133ns
Reverse Transfer Capacitance Cres
8pF
Switching Energy Eoff
136uJ
Td Off
86ns
Td On
12ns
Turn On Energy Eon
40uJ