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STMicroelectronics

STGD3NB60SDT4

igbt

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Key Specs Summary(13)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
18nC@3A,15V
Gate Emitter Threshold Voltage Vge Th Ic
2.5V@250uA
Igbt Type
-
Input Capacitance Cies
255pF@25V
Operating Temperature
-
package
DPAK
Pd Power Dissipation
48W
Reverse Recovery Time Trr
1.7us
Switching Energy Eoff
1.15mJ
Td Off
3.4us
Td On
125us
Turn On Energy Eon
1.1mJ

Pages by item in this datasheet

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Absolute maximum ratings
1 page
Electrical characteristics
2 pages
Thermal information
1 page
Package drawing
1 page
Ordering information
1 page
STMicroelectronics datasheet · 9 pages · 32 sections, 13 tables, 25 figuresAll items and pages through the MCP →