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STMicroelectronics STGW40H65DFB
Collected dataigbt

STMicroelectronics

STGW40H65DFB

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
650V
Gate Charge Qg
210nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@1mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
5.412nF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
198pF
package
TO-247
Pd Power Dissipation
283W
Reverse Recovery Time Trr
62ns
Reverse Transfer Capacitance Cres
107pF
Switching Energy Eoff
363uJ
Td Off
142ns
Td On
40ns
Turn On Energy Eon
498uJ