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Key Specs Summary(16)
- Collector Emitter Breakdown Voltage Vces
- 600V
- Gate Charge Qg
- 102nC@15V
- Gate Emitter Threshold Voltage Vge Th Ic
- 3.75V@250uA
- Igbt Type
- IGBT Module
- Input Capacitance Cies
- 2.08nF
- Operating Temperature
- -55℃~+150℃@(Tj)
- Output Capacitance Coes
- 175pF
- package
- TO-247
- Pd Power Dissipation
- 200W
- Pulsed Current Forward Ifm
- 120A
- Reverse Recovery Time Trr
- 40ns
- Reverse Transfer Capacitance Cres
- 52pF
- Switching Energy Eoff
- 181uJ
- Td Off
- 118ns
- Td On
- 29.5ns
- Turn On Energy Eon
- 305uJ