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STMicroelectronics STGW30V60DF
Collected dataigbt

STMicroelectronics

STGW30V60DF

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
163nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@1mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
3.75nF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
120pF
package
TO-247
Pd Power Dissipation
258W
Reverse Recovery Time Trr
53ns
Reverse Transfer Capacitance Cres
77pF
Switching Energy Eoff
233uJ
Td Off
189ns
Td On
45ns
Turn On Energy Eon
383uJ