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STMicroelectronics STGYA50H120DF2
Collected dataigbt

STMicroelectronics

STGYA50H120DF2

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
1.2kV
Gate Charge Qg
210nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@2mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
4.15nF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
288pF
package
TO-247
Pd Power Dissipation
535W
Reverse Recovery Time Trr
340ns
Reverse Transfer Capacitance Cres
104pF
Switching Energy Eoff
2.1mJ
Td Off
284ns
Td On
40ns
Turn On Energy Eon
2mJ