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Collected dataigbt

STMicroelectronics

STGWT80V60DF

igbt

Ask your AI about STGWT80V60DF — and the rest of your design

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Key Specs Summary(12)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
448nC
Gate Emitter Threshold Voltage Vge Th Ic
2.3V@15V,80A
Igbt Type
FS (Field Stop)
Operating Temperature
-55℃~+175℃@(Tj)
package
TO-3P
Pd Power Dissipation
469W
Reverse Recovery Time Trr
60ns
Switching Energy Eoff
1mJ
Td Off
220ns
Td On
60ns
Turn On Energy Eon
1.8mJ