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STMicroelectronics STGWA75H65DFB2
Collected dataigbt

STMicroelectronics

STGWA75H65DFB2

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
650V
Gate Charge Qg
207nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@1mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
4.357nF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
264pF
package
TO-247
Pd Power Dissipation
357W
Reverse Recovery Time Trr
88ns
Reverse Transfer Capacitance Cres
117pF
Switching Energy Eoff
1.05mJ
Td Off
100ns
Td On
28ns
Turn On Energy Eon
1.428mJ