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Key Specs Summary(15)
- Collector Emitter Breakdown Voltage Vces
- 650V
- Gate Charge Qg
- 150nC@15V
- Gate Emitter Threshold Voltage Vge Th Ic
- 5V@1mA
- Igbt Type
- FS (Field Stop)
- Input Capacitance Cies
- 4.2nF
- Operating Temperature
- -55℃~+175℃
- Output Capacitance Coes
- 252pF
- package
- TO-247
- Pd Power Dissipation
- 375W
- Reverse Recovery Time Trr
- 162ns
- Reverse Transfer Capacitance Cres
- 88pF
- Switching Energy Eoff
- 1.57mJ
- Td Off
- 130ns
- Td On
- 42ns
- Turn On Energy Eon
- 880uJ
Pages by item in this datasheet
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- Features
- 1 page
- Absolute maximum ratings
- 1 page
- Electrical characteristics
- 1 page
- Thermal information
- 1 page
- Timing
- 1 page
- Package drawing
- 2 pages
STMicroelectronics datasheet · 16 pages · 29 sections, 9 tables, 34 figuresAll items and pages through the MCP →