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Key Specs Summary(13)
- Collector Emitter Breakdown Voltage Vces
- 600V
- Gate Charge Qg
- 105nC
- Gate Emitter Threshold Voltage Vge Th Ic
- -
- Igbt Type
- FS (Field Stop)
- Input Capacitance Cies
- -
- Operating Temperature
- -40℃~+175℃@(Tj)
- package
- TO-220-3
- Pd Power Dissipation
- 260W
- Reverse Recovery Time Trr
- 110ns
- Switching Energy Eoff
- 400uJ
- Td Off
- 160ns
- Td On
- 50ns
- Turn On Energy Eon
- 350uJ
Pages by item in this datasheet
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- Features
- 1 page
- Absolute maximum ratings
- 1 page
- Electrical characteristics
- 3 pages
- Thermal information
- 1 page
- Timing
- 1 page
- Package drawing
- 2 pages
STMicroelectronics datasheet · 14 pages · 27 sections, 11 tables, 25 figuresAll items and pages through the MCP →