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STMicroelectronics STGP19NC60KD
Collected dataigbt

STMicroelectronics

STGP19NC60KD

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
600V
Gate Charge Qg
55nC
Gate Emitter Threshold Voltage Vge Th Ic
4.5V@250uA
Igbt Type
-
Input Capacitance Cies
-
Operating Temperature
-55℃~+150℃@(Tj)
Output Capacitance Coes
1170pF
package
TO-220
Pd Power Dissipation
125W
Reverse Recovery Time Trr
31ns
Reverse Transfer Capacitance Cres
127pF
Switching Energy Eoff
255uJ
Td Off
105ns
Td On
30ns
Turn On Energy Eon
165uJ