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STMicroelectronics STGB20M65DF2
Collected dataigbt

STMicroelectronics

STGB20M65DF2

igbt

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Key Specs Summary(13)

Collector Emitter Breakdown Voltage Vces
650V
Gate Charge Qg
63nC@15V
Gate Emitter Threshold Voltage Vge Th Ic
5V@0.5mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
1.688nF@25V
Operating Temperature
-55℃~+175℃
package
D2PAK
Pd Power Dissipation
166W
Reverse Recovery Time Trr
166ns
Switching Energy Eoff
560uJ
Td Off
108ns
Td On
26ns
Turn On Energy Eon
140uJ