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STMicroelectronics STGB10H60DF
Collected dataigbt

STMicroelectronics

STGB10H60DF

igbt

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Key Specs Summary(12)

Collector Emitter Breakdown Voltage Vces
600V
Gate Emitter Threshold Voltage Vge Th Ic
5V@250uA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
1.3nF@25V
Operating Temperature
-55℃~+175℃
package
D2PAK
Pd Power Dissipation
115W
Reverse Recovery Time Trr
107ns
Switching Energy Eoff
140uJ
Td Off
103ns
Td On
19.5ns
Turn On Energy Eon
83uJ