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STMicroelectronics STB155N3LH6

STMicroelectronics

STB155N3LH6

mosfet

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Key Specs Summary(32)

Continuous Drain Current Id
80A
Drain Source On Resistance Max
3MΩ
Drain To Source Breakdown Voltage
30V
Drain To Source Resistance
3mΩ
Drain To Source Voltage Vdss
30V
Fall Time
40ns
Gate To Source Voltage Vgs
20V
height
4.6mm
Input Capacitance
3.8nF
Lead Free
Lead Free
length
10.75mm
Max Power Dissipation
110W
Mount Type
Surface Mount
Operating Temperature Max
175°C
Operating Temperature Min
-55°C
Package Case
SMALL OUTLINE, R-PSSO-G2
Lifecycle Status
Active
Number Of Elements
1
package
SMALL OUTLINE, R-PSSO-G2
Package Quantity
1000
Packing Style
Tape and Reel
polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
3mΩ
Reach Compliant
No
Rohs Compliant
Yes
series
DeepGATE™, STripFET™ VI
Threshold Voltage
1V
Turn Off Delay Time
100ns
Turn On Delay Time
15ns
width
10.4mm

Pages by item in this datasheet

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Features
1 page
Absolute maximum ratings
1 page
Electrical characteristics
2 pages
Thermal information
1 page
Package drawing
6 pages
STMicroelectronics datasheet · 18 pages · 29 sections, 15 tables, 25 figuresAll items and pages through the MCP →