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STMicroelectronics STB120N4LF6

STMicroelectronics

STB120N4LF6

mosfet

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Key Specs Summary(31)

Continuous Drain Current Id
80A
Drain Source On Resistance Max
4MΩ
Drain To Source Breakdown Voltage
40V
Drain To Source Resistance
4mΩ
Drain To Source Voltage Vdss
40V
Fall Time
45ns
Gate To Source Voltage Vgs
20V
height
4.6mm
Input Capacitance
4.3nF
Lead Free
Lead Free
length
10.75mm
Max Power Dissipation
110W
Mount Type
Surface Mount
Operating Temperature Max
175°C
Operating Temperature Min
-55°C
Package Case
SMALL OUTLINE, R-PSSO-G2
Lifecycle Status
Active
package
SMALL OUTLINE, R-PSSO-G2
Package Quantity
1
Packing Style
Tape and Reel
polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
4mΩ
Reach Compliant
No
Rohs Compliant
Yes
series
DeepGATE™, STripFET™ VI
Threshold Voltage
1V
Turn Off Delay Time
125ns
Turn On Delay Time
15ns
width
10.4mm