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STMicroelectronics STW4N150
Collected dataMOSFETs

STMicroelectronics(formerly Stmicroelectronics)

STW4N150

mosfet

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Key Specs Summary(34)

Continuous Drain Current Id
4A
Drain To Source Breakdown Voltage
1.5kV
Drain To Source Resistance
7Ω
Drain To Source Voltage Vdss
1.5kV
Fall Time
45ns
Gate To Source Voltage Vgs
30V
height
20.15mm
Input Capacitance
1.3nF
Lead Free
Lead Free
length
15.75mm
Max Power Dissipation
160W
Operating Temperature Max
150°C
Operating Temperature Min
-55°C
Package Case
FLANGE MOUNT, R-PSFM-T3
Contact Current Rating
4A
Drain Source On Resistance Max
7Ω
Lifecycle Status
Active
Mount Type
Through Hole
Number Of Elements
1
package
FLANGE MOUNT, R-PSFM-T3
Package Quantity
30
Packing Style
Rail/Tube
polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
7Ω
Reach Compliant
No
Rohs Compliant
Yes
series
PowerMESH™
Threshold Voltage
4V
Turn Off Delay Time
45ns
Turn On Delay Time
35ns
Contact Voltage Rating Dc
1.5kV
width
5.15mm