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Samwin SWP640D
Collected dataMOSFETs

Samwin

SWP640D

mosfet

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Key Specs Summary(11)

Current Continuous Drain Id
18A
Drain To Source Voltage
200V
Gate Charge Qg
38nC@10V
Gate Threshold Voltage Vgs Th
4V
Input Capacitance Ciss
1.3nF
number
1 N-channel
Operating Temperature
-55℃~+150℃
package
TO-220
Pd Power Dissipation
110.6W
Rds On
150mΩ@10V
Reverse Transfer Capacitance Crss Vds
61pF