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Samwin SWD4N60D
Collected dataMOSFETs

Samwin

SWD4N60D

mosfet

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Key Specs Summary(11)

Current Continuous Drain Id
4A
Drain To Source Voltage
600V
Gate Charge Qg
18nC@10V
Gate Threshold Voltage Vgs Th
2.5V
Input Capacitance Ciss
651pF
number
1 N-channel
Operating Temperature
-55℃~+150℃
package
TO-252
Pd Power Dissipation
141W
Rds On
1.9Ω@10V
Reverse Transfer Capacitance Crss Vds
8.4pF