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STMicroelectronics STP100N10F7

STMicroelectronics

STP100N10F7

mosfet

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Key Specs Summary(31)

Continuous Drain Current Id
80A
Drain To Source Breakdown Voltage
100V
Drain To Source Resistance
6.8mΩ
Drain To Source Voltage Vdss
100V
Fall Time
16ns
Gate To Source Voltage Vgs
20V
height
15.75mm
Input Capacitance
4.39nF
Lead Free
Lead Free
length
10.4mm
Max Power Dissipation
150W
Mount Type
Through Hole
Operating Temperature Max
175°C
Operating Temperature Min
-55°C
Package Case
FLANGE MOUNT, R-PSFM-T3
Drain Source On Resistance Max
8mΩ
Lifecycle Status
Active
package
FLANGE MOUNT, R-PSFM-T3
Package Quantity
50
Packing Style
Rail/Tube
polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
8mΩ
Reach Compliant
No
Rohs Compliant
Yes
series
StripFET™ VII, DeepGATE™
Threshold Voltage
4.5V
Turn Off Delay Time
46ns
Turn On Delay Time
27ns
width
4.6mm