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STMicroelectronics STGW80H65DFB
Collected dataigbt

STMicroelectronics

STGW80H65DFB

igbt

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
650V
Gate Charge Qg
414nC
Gate Emitter Threshold Voltage Vge Th Ic
5V@1mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
10.524nF
Operating Temperature
-55℃~+175℃@(Tj)
Output Capacitance Coes
385pF
package
TO-247
Pd Power Dissipation
469W
Reverse Recovery Time Trr
85ns
Reverse Transfer Capacitance Cres
215pF
Switching Energy Eoff
1.5mJ
Td Off
280ns
Td On
84ns
Turn On Energy Eon
2.1mJ