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Collected dataigbt

STMicroelectronics

STGW25H120DF2

igbt

Ask your AI about STGW25H120DF2 — and the rest of your design

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Key Specs Summary(15)

Collector Emitter Breakdown Voltage Vces
1.2kV
Gate Charge Qg
100nC@15V
Gate Emitter Threshold Voltage Vge Th Ic
5V@1mA
Igbt Type
FS (Field Stop)
Input Capacitance Cies
2.01nF
Operating Temperature
-55℃~+175℃
Output Capacitance Coes
146pF
package
TO-247
Pd Power Dissipation
375W
Reverse Recovery Time Trr
303ns
Reverse Transfer Capacitance Cres
49pF
Switching Energy Eoff
700uJ
Td Off
130ns
Td On
29ns
Turn On Energy Eon
600uJ