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STMicroelectronics STGIPN3H60T-H
Collected dataThyristors

STMicroelectronics

STGIPN3H60T-H

thyristor

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Key Specs Summary(16)

Contact Configuration
Three-phase bridge
Current Continuous Drain Id
3A
Drain To Source Voltage
600V
features
Undervoltage lockout with hysteresis;Overcurrent Protection;Thermal Protection;With enable
High Side Bias Voltage Vbs
13 to 18V
length
29.15mm
Operating Temperature
-40℃~+150℃
package
DIP-26
Pd Power Dissipation
9.7W
Quiescent Current Iq
1mA
Rds On
-
Frequency Switching
25kHz
type
IGBT
Voltage Isolation
1000Vrms
Voltage Supply
13.5 to 18V
width
12.45mm