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STMicroelectronics STB35N65DM2
Collected dataMOSFETs

STMicroelectronics

STB35N65DM2

mosfet

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Key Specs Summary(11)

Current Continuous Drain Id
32A
Drain To Source Voltage
650V
Gate Charge Qg
56.3nC@520V
Gate Threshold Voltage Vgs Th
4V
Input Capacitance Ciss
2.54nF
number
1 N-channel
Operating Temperature
-55℃~+150℃
package
D2PAK
Pd Power Dissipation
250W
Rds On
93mΩ@10V
Reverse Transfer Capacitance Crss Vds
2.5pF