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Key Specs Summary(15)
- Driven Configuration
- Half-Bridge
- Fall Time
- 35ns
- features
- Under Voltage Protection;Enable shutdown;Over Current Protection;Dead-time control;Overtemperature protection (OTP);Interleaved conduction protection;Built-in bootstrap diode;Charge pump boost
- High Level Delay Time
- 50ns
- Current Output High Ioh
- 290mA
- Input Logic Level High
- 1.9 to 2.25V
- Input Logic Level Low
- 800 to 1.1
- Load Type
- MOSFET;IGBT
- Low Level Delay Time
- 50ns
- Current Output Low Iol
- 430mA
- Operating Temperature
- -40℃~+125℃
- package
- SO-14
- Quiescent Current
- 500uA
- Rise Time
- 75ns
- Voltage Supply
- 12.5 to 20V