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STMicroelectronics IRF630

STMicroelectronics

IRF630

mosfet

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Key Specs Summary(36)

Continuous Drain Current Id
9A
Drain To Source Breakdown Voltage
200V
Drain To Source Resistance
400mΩ
Drain To Source Voltage Vdss
200V
Dual Supply Voltage
200V
Gate To Source Voltage Vgs
20V
height
9.15mm
Input Capacitance
700pF
Lead Free
Lead Free
Lead Pitch
2.54mm
length
10.4mm
Operating Temperature Max
150°C
Operating Temperature Min
-65°C
Package Case
TO-220
Contact Current Rating
9A
Drain Source On Resistance Max
400mΩ
Lifecycle Status
Volume Production
Max Power Dissipation
75W
Mount Type
Through Hole
Nominal Vgs
3V
Number Of Elements
1
On State Resistance
400mΩ
Package Quantity
1000
Packing Style
Rail/Tube
polarity
N-CHANNEL
Power Dissipation
75W
Radiation Hardening
No
Rds On Max
400mΩ
Reach Compliant
No
Reverse Recovery Time
170ns
Rohs Compliant
Yes
series
MESH OVERLAY™ II
Threshold Voltage
3V
Turn On Delay Time
10ns
Contact Voltage Rating Dc
200V
width
4.6mm

Pages by item in this datasheet

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Absolute maximum ratings
1 page
Electrical characteristics
2 pages
Thermal information
1 page
Package drawing
2 pages
STMicroelectronics datasheet · 14 pages · 26 sections, 11 tables, 23 figuresAll items and pages through the MCP →