STMicroelectronics
2N6059
We keep the manufacturer's original datasheet (PDF) for this part number. There is no catalog summary for it yet — check values and applicability on the original pages.
From page 1 of the datasheet
2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
I STMicrolectronics PREFERRED
SALESTYPE
I HIGH GAIN
Obsolete Product(s) - Obsolete Product(s)
I NPN DARLINGTON
I HIGH CURRENT
I HIGH DISSIPATION
I INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
1 2
APPLICATIONS
I LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
TO-3
DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 KΩ R2 Typ. = 55 Ω
ABSOLUTE MAXIMUM RATINGS
ICM Collector Peak Current (tp < 5 ms) 20 A
Ptot Total Dissipation at Tc ≤ 25 oC 150 W
1/4
February 2003
Text from page 1 of the manufacturer's original (tables and part-number lists left out). Check values and conditions on the original pages.
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