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Key Specs Summary(8)
- Collector Emitter Breakdown Voltage Vces
- 1.2kV
- Current Collector Ic
- 170A
- Gate Emitter Threshold Voltage Vge Th Ic
- -
- Igbt Type
- NPT (Non-Punch Through)
- Input Capacitance Cies
- 9.3nF@25V
- Operating Temperature
- -55℃~+150℃@(Tj)
- package
- -
- Pd Power Dissipation
- 830W