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Infineon Technologies IPW65R080CFDA
IPW65R080CFDA image 2
Collected dataMOSFETs

Infineon Technologies(formerly Infineon)

IPW65R080CFDA

mosfet

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Key Specs Summary(35)

Basic Package Type
Through Hole
Package Height Mm
21.1(Max)
jedec
TO-247
Lead Shape
Through Hole
Package Length Mm
16.13(Max)
Mount Type
Through Hole
Package Case
Through Hole
Package Description
Transistor Outline Package
Package Family Name
TO-247
Package Material
Plastic
pcb
3
Pin Count
3
Pin Pitch Mm
5.44
Seated Plane Height Mm
25.57(Max)
tab
Tab
Package Width Mm
5.21(Max)
category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Contact Configuration
Single
Maximum Continuous Drain Current
43.3
Maximum Drain Source Voltage
650
Lifecycle Status
Active
Maximum Power Dissipation
391000
Maximum Drain Source Resistance
80@10V
Maximum Gate Source Voltage
20
Maximum Gate Threshold Voltage
4.5
Number Of Elements Per Chip
1
Operating Temperature Max
150
Operating Temperature Min
-40
package
Through Hole
Process Technology
CoolMOS
Typical Gate Charge 10 V
161
Typical Gate Charge Vgs
161@10V
Typical Input Capacitance Vds
4440@100V