📦이미지 준비중
주요 스펙 요약(11)
- Collector Emitter Breakdown Voltage Vces
- 650V
- Gate Charge Qg
- 210nC
- Gate Emitter Threshold Voltage Vge Th Ic
- 2.3V@15V,40A
- Igbt Type
- FS (Field Stop)
- Operating Temperature
- -55℃~+175℃@(Tj)
- package
- TO-3P
- Pd Power Dissipation
- 283W
- Switching Energy Eoff
- 363mJ
- Td Off
- 142ns
- Td On
- 40ns
- Turn On Energy Eon
- 498mJ