주요 스펙 요약(14)
- Collector Emitter Breakdown Voltage Vces
- 650V
- Gate Charge Qg
- 25nC@15V
- Gate Emitter Threshold Voltage Vge Th Ic
- 4.5V@0.5mA
- Input Capacitance Cies
- 652pF
- Operating Temperature
- -40℃~+175℃
- Output Capacitance Coes
- 64pF
- package
- TO-220F
- Pd Power Dissipation
- 48W
- Reverse Recovery Time Trr
- 40ns
- Reverse Transfer Capacitance Cres
- 23pF
- Switching Energy Eoff
- 0.27uJ
- Td Off
- 26ns
- Td On
- 4ns
- Turn On Energy Eon
- 0.18uJ