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Key Specs Summary(32)
- Average Forward Current If Av Per Leg At Tc 155 C
- 10
- Contact Configuration
- Dual, common cathode (2x)
- Continuous Forward Current Per Leg At Tc 135 C
- 15.2
- Continuous Forward Current Per Leg At Tc 25 C
- 30
- Dc Blocking Voltage Vdc
- 1200
- Device Type
- Silicon Carbide (SiC) Schottky diode
- Forward Voltage Vf At If 10 A Tj 175 C
- typ 2.0 (max 3.0)
- Forward Voltage Vf Typ At If 10 A Tj 25 C
- 1.48 (max 1.7)
- Junction Temperature Range Tvj
- -55 to 175
- Non Repetitive Surge Forward Current Ifsm 10 Ms Sine Tc 25 C Per Leg
- 72
- Repetitive Peak Forward Current Ifrm 0 1 Hz 100 Cycles 10 Ms Per Leg
- 56
- Repetitive Peak Reverse Voltage Vrrm
- 1200
- Reverse Current Ir At Vr 1200 V Tj 25 C
- typ 1, max 100
- Storage Temperature Range Tstg
- -55 to 175
- Total Power Dissipation Ptot At Tc 150 C Per Leg
- 29
- Total Power Dissipation Ptot At Tc 25 C Per Leg
- 176
- Aec Q101 Qualification
- No
- Capacitance C At Vr 1 V F 1 Mhz
- 575
- Capacitance C At Vr 400 V F 1 Mhz
- 59
- Capacitance C At Vr 800 V F 1 Mhz
- 42.5
- Lead Pitch E
- 5.45 (typical, TO‑247‑3L)
- Lifecycle Status
- Active
- Mounting Torque M3 Screw
- 0.7
- msl
- 1
- package
- TO-247-3L, Through-Hole
- Package Body Thickness A
- 4.83 to 5.21
- Package Length D
- 20.30 to 21.10
- Pin Count
- 3
- Pinout To 247 3 L
- 1=Anode, 2=Cathode, 3=Anode; Tab=Case
- Reverse Current Ir At Vr 1200 V Tj 175 C
- typ 10, max 250
- Thermal Resistance Junction To Case Rth J C Per Leg
- 0.85
- Total Capacitive Charge Qc At Vr 800 V Tj 25 C
- 62