본문으로 건너뛰기
PartsPlan AIPartsPlan AI
Vishay SIS412DN-T1-GE3
검증된 스펙MOSFETs

Vishay(구 Vishay Sprague)

SIS412DN-T1-GE3

mosfet

국내 재고 없음

이 부품에 대한 견적을 요청하시면 판매자들이 가격을 제시합니다.

주요 스펙 요약(30)

continuous_drain_current_id
12A
drain_source_on_resistance_max
24
drain_to_source_resistance
24
drain_to_source_voltage_vdss
30V
fall_time
10ns
gate_to_source_voltage_vgs
20V
height
1.04mm
input_capacitance
435pF
lead_free
Lead Free
length
3.05mm
max_power_dissipation
15.6W
mount_type
Surface Mount
nominal_vgs
1V
number_of_channels
1
operating_temperature_max
150°C
operating_temperature_min
-55°C
lifecycle_status
Active
package
SMALL OUTLINE, S-XDSO-C5
package_quantity
1
packing_style
Tape and Reel
polarity
N-CHANNEL
radiation_hardening
No
rds_on_max
24
reach_compliant
Unknown
rohs_compliant
Yes
series
TrenchFET®
threshold_voltage
1V
turn_off_delay_time
15ns
turn_on_delay_time
15ns
width
3.05mm

유사 부품

해외 재고