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주요 스펙 요약(29)
- collector_emitter_breakdown_voltage
- 30V
- collector_emitter_saturation_voltage
- 400mV
- collector_emitter_voltage_max
- 30V
- collector_emitter_voltage_vceo
- 30V
- height
- 5.84mm
- lead_free
- Lead Free
- length
- 6.22mm
- max_breakdown_voltage
- 30V
- max_power_dissipation
- 100mW
- mount_type
- Through Hole
- number_of_elements
- 1
- operating_temperature_max
- 100°C
- operating_temperature_min
- -40°C
- output_configuration
- Phototransistor
- output_current
- 1mA
- package_case
- PLASTIC
- lifecycle_status
- Active
- output_voltage
- 30V
- package
- PLASTIC
- package_material
- SILICON
- package_quantity
- 50
- packing_style
- Bulk
- polarity
- NPN
- power_dissipation
- 100mW
- radiation_hardening
- No
- reach_compliant
- No
- rohs_compliant
- Yes
- wavelength
- 935nm
- width
- 4.6mm