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Renesas Electronics

RJK6015DPK-00-T0

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주요 스펙 요약(33)

basic_package_type: Through Hole
category: Power MOSFET
contact_configuration: Single
package_height_mm: 18.9
lead_shape: Through Hole
package_length_mm: 15.6
mount_type: Through Hole
package_case: Through Hole
package_description: Transistor Outline Package
package_family_name: TO-3P
package_material: Plastic
pcb: 3
pin_count: 3
pin_pitch_mm: 5.45
tab: Tab
package_width_mm: 4.8
channel_mode: Enhancement
channel_type: N
lifecycle_status: Active
material: Si
maximum_continuous_drain_current: 21
maximum_drain_source_resistance: 360@10V
maximum_drain_source_voltage: 600
maximum_gate_source_voltage: ±30
maximum_gate_threshold_voltage: 4.5
maximum_power_dissipation: 150000
number_of_elements_per_chip: 1
operating_temperature_max: 150
operating_temperature_min: -55
package: Through Hole
typical_gate_charge_10_v: 67
typical_gate_charge_vgs: 67@10V
typical_input_capacitance_vds: 2600@25V

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