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Infineon Technologies BSP295H6327XTSA1
검증된 스펙MOSFETs

Infineon Technologies

BSP295H6327XTSA1

mosfet

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주요 스펙 요약(27)

contact_plating
Tin
continuous_drain_current_id
1.8A
drain_to_source_breakdown_voltage
60V
drain_to_source_resistance
220
drain_to_source_voltage_vdss
60V
fall_time
19ns
gate_to_source_voltage_vgs
20V
halogen_free
Halogen Free
input_capacitance
368pF
lead_free
Lead Free
max_dual_supply_voltage
60V
max_power_dissipation
1.8W
mount_type
Surface Mount
operating_temperature_max
150°C
operating_temperature_min
-55°C
package_case
SMALL OUTLINE, R-PDSO-G4
lifecycle_status
Active
number_of_elements
1
package
SMALL OUTLINE, R-PDSO-G4
package_quantity
1000
packing_style
Tape and Reel
polarity
N-CHANNEL
power_dissipation
1.8W
rds_on_max
300
rohs_compliant
Yes
series
SIPMOS®
turn_off_delay_time
27ns

유사 부품

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