주요 스펙 요약(12)
- current_continuous_drain_id
- 19A
- drain_to_source_voltage
- 60V
- gate_charge_qg
- 65nC@10VV
- gate_threshold_voltage_vgs_th
- 2.3V
- input_capacitance_ciss
- 2.5F
- number
- 1 N-channel
- operating_temperature
- -55℃~+150℃°C
- output_capacitance_coss
- 670F
- package
- SOIC-8
- pd_power_dissipation
- 3.1W
- rds_on
- 4.8mΩ@10VV
- reverse_transfer_capacitance_crss_vds
- 65F